Retraction
Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress
Paper Information
Record ID:
17658
Journal:
Publication Date:
November 07, 2012
Retraction Date:
January 15, 2013
(12.9 years years ago)
Subjects:
Institutions:
Country:
🇹🇼 TaiwanArticle Type:
Publisher:
Elsevier
Open Access:
Yes
PubMed ID:
Not indexed in PubMed
Retraction PubMed ID:
Not indexed in PubMed
Retraction Details
Citations (3)
3
Total Citations3
Post-Retraction(100.0%)
0
Pre-Retraction0
Same DayPost-Retraction Citation Analysis
0
Within 30 days
1
Within 1 year
1
After 2+ years
1141
Days since retraction (latest)
Paper citing Investigating degradation behavior of InGaZnO thin...
Unknown Authors
Unknown Journal
Published: Mar 2016
1141 days after retraction
Paper citing Investigating degradation behavior of InGaZnO thin...
Unknown Authors
Unknown Journal
Published: Jun 2014
502 days after retraction
Paper citing Investigating degradation behavior of InGaZnO thin...
Unknown Authors
Unknown Journal
Published: Jul 2013
181 days after retraction
Quick Stats
Total Citations:
3
Years Since Retraction:
12.9 years
Open Access:
Yes
Last Checked:
Never