Retraction
Electrical behavior of atomic layer deposited high quality SiO2 gate dielectric
Paper Information
Record ID:
18475
Journal:
Publication Date:
September 10, 2014
Retraction Date:
December 27, 2014
(10.9 years years ago)
Institution:
Center for Materials Research, Norfolk State University, 700 Park Ave., Norfolk, Virginia 23504Country:
🇺🇸 United StatesArticle Type:
Publisher:
AIP Publishing
Open Access:
Yes
DOI:
PubMed ID:
Not indexed in PubMed
Retraction PubMed ID:
Not indexed in PubMed
Retraction Details
Citations (5)
5
Total Citations4
Post-Retraction(80.0%)
0
Pre-Retraction0
Same DayPost-Retraction Citation Analysis
0
Within 30 days
0
Within 1 year
4
After 2+ years
1959
Days since retraction (latest)
Paper citing Electrical behavior of atomic layer deposited high...
Unknown Authors
Unknown Journal
Published: Unknown
Paper citing Electrical behavior of atomic layer deposited high...
Unknown Authors
Unknown Journal
Published: May 2020
1959 days after retraction
Paper citing Electrical behavior of atomic layer deposited high...
Unknown Authors
Unknown Journal
Published: Dec 2018
1435 days after retraction
Paper citing Electrical behavior of atomic layer deposited high...
Unknown Authors
Unknown Journal
Published: Jun 2018
1259 days after retraction
Paper citing Electrical behavior of atomic layer deposited high...
Unknown Authors
Unknown Journal
Published: Oct 2017
1034 days after retraction
Quick Stats
Total Citations:
5
Years Since Retraction:
10.9 years
Open Access:
Yes
Last Checked:
Never