Retraction
High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy
Paper Information
Record ID:
18816
Author(s):
Journal:
Publication Date:
January 03, 2013
Retraction Date:
July 19, 2018
(7.3 years years ago)
Subjects:
Country:
🇨🇳 ChinaArticle Type:
Publisher:
Elsevier
Open Access:
Yes
PubMed ID:
Not indexed in PubMed
Retraction PubMed ID:
Not indexed in PubMed
Retraction Details
Retraction Reasons:
Nature of Retraction:
Retraction
Retraction Notice:
10.1016/j.jcrysgro.2018.09.044Additional Notes:
Notice published after article marked as retracted;
Citations (1)
1
Total Citations0
Post-Retraction1
Pre-Retraction0
Same DayPaper citing High quality N-polar GaN two-dimensional growth on...
Unknown Authors
Unknown Journal
Published: Sep 2014
1417 days before retraction
Quick Stats
Total Citations:
1
Years Since Retraction:
7.3 years
Open Access:
Yes
Last Checked:
Never