Retraction
Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk
Paper Information
Record ID:
30033
Author(s):
Journal:
Publication Date:
August 15, 2011
Retraction Date:
February 02, 2012
(13.8 years years ago)
Subject:
Broad Categories:
Technology
Technology
Specific Fields:
Technology
Technology
Institutions:
- Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, South Korea
- Semiconductor Research and Development Center, Samsung Electronics Company, Yongin si, Gyeonggi, South Korea
- School of Computational Sciences, Korea Institute for Advanced Study (KIAS), Seoul, South Korea
- National Center for Nanomaterials and Technology NCNT, Pohang, South Korea
Country:
🇰🇷 South KoreaArticle Type:
Publisher:
IEEE: Institute of Electrical and Electronics Engineers
Open Access:
Yes
PubMed ID:
Not indexed in PubMed
Retraction PubMed ID:
Not indexed in PubMed
Retraction Details
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Total Citations:
0
Years Since Retraction:
13.8 years
Open Access:
Yes
Last Checked:
Never