Retraction

Transfer printing of fully formed microscale InGaP/GaAs/InGaNAsSb cell on Ge cell in mechanically-stacked quadruple-junction architecture

Retraction Details

Retraction Reason:

Duplication of/in Article

Nature of Retraction:

Retraction

Citations (5)

5
Total Citations
2
Post-Retraction
(40.0%)
2
Pre-Retraction
0
Same Day
Post-Retraction Citation Analysis
0 Within 30 days
0 Within 1 year
0 After 2+ years
447 Days since retraction (latest)
Heavy Metals Removal Using Carbon Based Nanocomposites
Unknown Authors
Unknown Journal
Published: Unknown
Electronic Structure and Optical Properties of Cu2ZnSnS4 under Stress Effect
Xiufan Yang, Xinmao Qin, Wanjun Yan et al. (6 authors)
Crystals Open Access
Published: Oct 2022
2 citations
447 days after retraction
Next Generation of High‐Performance Printed Flexible Electronics
Abhishek Singh Dahiya, Yogeenth Kumaresan, Ravinder Dahiya
Unknown Journal
Published: Sep 2022
433 days after retraction
Comparison from Simulated Al0.3Ga0.7As/GaAs/Ge and Al0.3Ga0.7As/GaAs/Si/Ge to Experimental InGaP/GaAs/InGaNAsSb/Ge for Optimized Utilization of the Solar Spectrum
LI Hong-xi, Yulin Tian, Ling Shen et al. (4 authors)
Journal of Electronic Materials
Published: Jan 2021
192 days before retraction
Investigation on Key Parameters in the Fabrication of Stamps for Transfer Printing of Micro Devices
Changwen Su, Yue Lin, Tien‐Mo Shih et al. (10 authors)
Applied Sciences Open Access
Published: Jul 2020
3 citations
387 days before retraction
Quick Stats
Total Citations: 7
Years Since Retraction: 4.3 years
Open Access: Yes
Last Checked: Jul 24, 2025
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