Retraction

Improvement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices

Paper Information

Record ID:
51964
Publication Date:
September 22, 2022
Retraction Date:
January 24, 2024 (1.8 year years ago)
Article Type:
Publisher:
Hindawi
Open Access:
Yes
PubMed ID:
Not indexed in PubMed
Retraction PubMed ID:
Not indexed in PubMed

Citations (5)

5
Total Citations
1
Post-Retraction
(20.0%)
2
Pre-Retraction
1
Same Day
Post-Retraction Citation Analysis
0 Within 30 days
1 Within 1 year
0 After 2+ years
342 Days since retraction (latest)
Heavy Metals Removal Using Carbon Based Nanocomposites
Unknown Authors
Unknown Journal
Published: Unknown
Influence of High Temperature on the Electrical Properties of GaN HEMT Devices: A Review
Mohammad A. Yaseen, Razali Ismail
Unknown Journal
Published: Dec 2024
342 days after retraction
Retracted: Improvement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices
Journal of Sensors
Journal of Sensors Open Access
Published: Jan 2024
Same day as retraction
Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates
Sakhone Pharkphoumy, V. Janardhanam, Taehoon Jang et al. (5 authors)
Electronics Open Access
Published: Feb 2023
7 citations
338 days before retraction
Near-junction thermal managements of electronics
Yu-Chao Hua, Yang Shen, Zheng-Lai Tang et al. (6 authors)
Advances in heat transfer
Published: Jan 2023
13 citations
388 days before retraction
Quick Stats
Total Citations: 7
Years Since Retraction: 1.8 year
Open Access: Yes
Last Checked: Jul 24, 2025
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