Retraction

Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates

Citations (13)

13
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Post-Retraction
13
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Same Day
Retraction: “Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates” [Appl. Phys. Lett. <b>58</b>, 2090 (1991)]
Marius Grundmann, J. Christen, D. Bimberg et al. (6 authors)
Applied Physics Letters Open Access
Published: Jun 2023
3 days before retraction
Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition
Jing Wang, L. W. Guo, Hai Qiang Jia et al. (7 authors)
Japanese Journal of Applied Physics
Published: Jul 2005
24 citations
6565 days before retraction
Formation of segregated cell structure for MBE growth of mismatched semiconductors
П. И. Гайдук, Ф. Ф. Комаров
Thin Solid Films
Published: Sep 1997
1 citation
9425 days before retraction
Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires
Daniel H. Rich, Y. Tang, H. T. Lin
Journal of Applied Physics
Published: May 1997
16 citations
9534 days before retraction
Novel features of photoluminescence spectra from acceptor-doped GaAs: formation of acceptor—acceptor pair emissions and optical compensation effect
Yunosuke Makita
Materials Science and Engineering R Reports
Published: Jun 1996
12 citations
9882 days before retraction
Evaluation of the homogeneity of stabilised/solidified wastes by a video imaging technique
Ying Gao
Waste Management & Research The Journal for a Sustainable Circular Economy
Published: Aug 1995
10187 days before retraction
Evaluation of the Homogeneity of Stabilised/ Solidified Wastes By a Video Imaging Technique
Yimin Gao, Mei Liu, J. M. Grow et al. (4 authors)
Waste Management & Research The Journal for a Sustainable Circular Economy
Published: Jul 1995
10218 days before retraction
Interface defect structure of metal-organic chemically vapour-deposited InP and GaAs on Si(111)
H. Cerva, A. Krost, R. Schnabel et al. (4 authors)
Philosophical Magazine A
Published: May 1995
9 citations
10279 days before retraction
Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD
X. Li, Andrew M. Jones, S.D. Roh et al. (8 authors)
MRS Proceedings
Published: Jan 1995
16 citations
10399 days before retraction
Defect reduction in GaAs and InP grown on planar Si(111) and on patterned Si(001) substrates
A. Krost, R. Schnabel, F. Heinrichsdorff et al. (6 authors)
Journal of Crystal Growth
Published: Dec 1994
40 citations
10430 days before retraction
Molecular beam epitaxy of strained Si1−xGex layers on patterned substrates
E. Bugiel, B. Dietrich, H. J. Osten
Journal of Crystal Growth
Published: Jun 1993
7 citations
10978 days before retraction
Maskless growth of InP stripes on patterned Si (001): Defect reduction and improvement of optical properties
Marius Grundmann, A. Krost, D. Bimberg et al. (5 authors)
Applied Physics Letters
Published: Jun 1992
12 citations
11315 days before retraction
Quick Stats
Total Citations: 13
Years Since Retraction: 2.4 years
Open Access: Yes
Last Checked: Jul 24, 2025