Retraction
Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices
Paper Information
Record ID:
59192
Author(s):
Journal:
Publication Date:
August 29, 2022
Retraction Date:
December 13, 2023
(1.9 year years ago)
Subjects:
Institutions:
Country:
🇨🇳 ChinaArticle Type:
Publisher:
Hindawi
Open Access:
Yes
DOI:
PubMed ID:
Not indexed in PubMed
Retraction PubMed ID:
Not indexed in PubMed
Retraction Details
Citations (5)
5
Total Citations1
Post-Retraction(20.0%)
2
Pre-Retraction1
Same DayPost-Retraction Citation Analysis
0
Within 30 days
1
Within 1 year
0
After 2+ years
250
Days since retraction (latest)
Heavy Metals Removal Using Carbon Based Nanocomposites
Unknown Authors
Unknown Journal
Published: Unknown
Impact of using dual back surface field layers of different materials on GaAs single junction solar cell performance
Ala’eddin A. Saif, A. Mindil
Journal of Ovonic Research
Open Access
Published: Aug 2024
250 days after retraction
Retracted: Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices
Advances in Multimedia
Advances in Multimedia
Open Access
Published: Dec 2023
Same day as retraction
Effects of H+ ion bombardment on GaAs photocathode surface with Cs-O and Cs-F activation layers
Kaimin Zhang, Yijun Zhang, Qiming Wang et al. (10 authors)
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
Published: Dec 2023
12 days before retraction
The Effect of Heavy Doping Layer on Charge Collection Efficiency in P-type Silicon Substrate of EBCMOS Devices
Xulei Qin, QiDong Shi, Ye Li et al. (5 authors)
Unknown Journal
Open Access
Published: Jul 2023
1 citation
1 citation
155 days before retraction
Quick Stats
Total Citations:
7
Years Since Retraction:
1.9 year
Open Access:
Yes
Last Checked:
Jul 24, 2025