Retraction
Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors
Paper Information
Record ID:
7766
Author(s):
Journal:
Publication Date:
August 31, 2016
Retraction Date:
October 18, 2017
(8.1 years years ago)
Subjects:
Institutions:
Country:
🇨🇳 ChinaArticle Type:
Publisher:
Elsevier
Open Access:
Yes
PubMed ID:
Not indexed in PubMed
Retraction PubMed ID:
Not indexed in PubMed
Retraction Details
Retraction Reasons:
Nature of Retraction:
Retraction
Retraction Notice:
10.1016/j.apsusc.2016.08.153Citations (6)
6
Total Citations5
Post-Retraction(83.3%)
1
Pre-Retraction0
Same DayPost-Retraction Citation Analysis
0
Within 30 days
2
Within 1 year
0
After 2+ years
584
Days since retraction (latest)
Paper citing Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insu...
Unknown Authors
Unknown Journal
Published: May 2019
584 days after retraction
Paper citing Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insu...
Unknown Authors
Unknown Journal
Published: Feb 2019
496 days after retraction
Paper citing Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insu...
Unknown Authors
Unknown Journal
Published: Dec 2018
409 days after retraction
Paper citing Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insu...
Unknown Authors
Unknown Journal
Published: Mar 2018
161 days after retraction
Paper citing Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insu...
Unknown Authors
Unknown Journal
Published: Dec 2017
63 days after retraction
Paper citing Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insu...
Unknown Authors
Unknown Journal
Published: Jul 2017
109 days before retraction
Quick Stats
Total Citations:
6
Years Since Retraction:
8.1 years
Open Access:
Yes
Last Checked:
Never