Retraction
Effects of high-temperature diluted-H2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO2
Paper Information
Record ID:
7864
Author(s):
Journal:
Publication Date:
March 10, 2016
Retraction Date:
June 19, 2017
(8.4 years years ago)
Subjects:
Institutions:
Country:
🇯🇵 JapanArticle Type:
Publisher:
IOP Publishing
Open Access:
Yes
PubMed ID:
Not indexed in PubMed
Retraction PubMed ID:
Not indexed in PubMed
Retraction Details
Citations (3)
3
Total Citations2
Post-Retraction(66.7%)
1
Pre-Retraction0
Same DayPost-Retraction Citation Analysis
0
Within 30 days
1
Within 1 year
1
After 2+ years
1170
Days since retraction (latest)
Paper citing Effects of high-temperature diluted-H2 annealing o...
Unknown Authors
Unknown Journal
Published: Sep 2020
1170 days after retraction
Paper citing Effects of high-temperature diluted-H2 annealing o...
Unknown Authors
Unknown Journal
Published: Jul 2017
32 days after retraction
Paper citing Effects of high-temperature diluted-H2 annealing o...
Unknown Authors
Unknown Journal
Published: Jun 2017
18 days before retraction
Quick Stats
Total Citations:
3
Years Since Retraction:
8.4 years
Open Access:
Yes
Last Checked:
Never